?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 HAA1036(pnp) general purpose transistor r f ? ? m e c r eplace m f ea tures ? larg e i c . i c ? lo w v ce (s a m aximum r e lectri ca parameter collector-ba s collector-em emitter-base coll ector cut - emitter cut- o dc curre nt g collector-em t ransition fr e coll ector ou t c lassific a rank r ange parameter collector-ba s collector-em emitter-base coll ector cu r coll ector po w junctio n tem storage t em p m ent type c ma x .= -500 ma a t). ideal for l o r at ings (t a l charac t s e breakdown itter breakdo w b reakdown v - o ff current o f f current g ain itter saturatio n e q uency t p ut capacita n a tion of h f s e voltage itter v oltage v oltage r r ent-continu o w e r dissipatio n perature p e rature : 2sa103 6 ow -v oltage o p a = 25c unl e t eristics ( v oltage w n v oltage v o ltage n v oltage n ce f e o us n p erati on. e ss otherwi s ( t a = 25c u n symbol t v cb o i v ce o i v ebo i i cb o v i ebo v h fe v v ce (sat) i f t v c ob v 8 2 symbol v cb o v ce o v ebo i c p c t j t st g s e noted) n le ss other w t es t conditi o i c = -100 a,i e = i c =-1ma,i b =0 i e = -100ua,i c = v cb = -20v,i e = 0 v eb =-4 v,i c =0 v ce =-3 v,i c =-1 i c = -100ma,i b = v ce =-5 v,i c =- 2 v cb = -10v,i e = 0 p 2 -180 va lue -40 -32 -5 -500 200 150 -55 to +150 w i se noted) o ns = 0 = 0 0 0ma = -10ma 2 0ma,f =100 m 0 , f =1mhz 1 unit v v v ma mw c c mi n -40 -32 -5 82 m hz q 20- 270 s n ty p 200 7 s ot-23 max u -1 -1 390 -0.4 m r 180- 390 u ni t v v v a a v m hz pf marking hp hq hr 1: base 2:emitter 3: collector
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HAA1036(pnp) general purpose transistor typical characteristics -1 -10 -100 -1 -10 -100 -1000 -200 -400 -600 -800 -1000 -1 -10 -100 -1 -10 -100 10 100 1000 -1 -10 -100 -200 -400 -600 -800 -1000 -1200 0 25 50 75 100 125 150 0 50 100 150 200 250 -0.1 -1 -10 1 10 100 -0 -1 -2 -3 -4 -0 -3 -6 -9 -12 -15 -1 -10 10 100 1000 h fe -500 ta=100 ta=25 =10 i c v cesat collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -500 t a =25 t a =100 common emitter v ce =-3v collcetor current i c (ma) base-emmiter voltage v be (mv) common emitter v ce =-3v ta=25 o c ta=100 o c i c dc current gain h fe collector current i c (ma) -500 v be i c -500 =10 ta=100 ta=25 i c v besat base-emitter saturation voltage v besat (mv) collector current i c (ma) collector power dissipation pc (mw) ambient temperature ta ( ) pc ta c ob c ib f=1mhz i e =0/ i c =0 ta=25 o c capacitance c (pf) reverse voltage v (v) -20 v cb / v eb c ob / c ib -50ua -45ua -40ua -35ua -30ua -25ua -20ua -15ua static characteristic -10ua common emitter t a =25 i b =-5ua collector current i c (ma) collector-emitter voltage v ce (v) i c f t -20 common emitter v ce =-5v t a =25 o c transition frequency f t (mhz) collector current i c (ma)
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HAA1036(pnp) general purpose transistor sot-23 package outline dimensions dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950 ty p 0.037 ty p e1 1.800 2.000 0.071 0.079 l 0.550 r e f 0.022 r e f l1 0.300 0.500 0.012 0.020 0 8 0 8
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HAA1036(pnp) general purpose transistor sot-23 embossed carrier tape sot-23 tape leader and traller sot-23 reel dimensions are in millimeter reel option d d1 d2 g h i w1 w2 7 dia 178 54.40 13.00 r78 r25.60 r6.50 9.50 12.3 0 tolerance 2 1 1 1 1 1 1 1 dimensions are in millimeter type a b c d e f p0 p p1 w sot-23 3.15 2.77 1.22 1.50 1.75 3.50 4.00 4.00 2.0 0 8.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
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